* Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A
* Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A
* Advanced Package and Silicon combination for low rDS(on) a.

* Primary DC-DC Switch
* Motor Bridge Switch
* Synchronous Rectifier Top Bottom Pin 1 S S D S S G .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.

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